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3DD101 AN8356S 9412A LH1504 B8K350 AD566ASD ND432021 MC13192
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94 80 0 .2 5 12 11 2
12
11
12 3
7 6
2-O 5.5 4 12
(C2E1) 1
(E2) 2
(C1) 3
3-M5
23
23
17
16
7
16
7
16
4-fasten tab #110 t= 0.5 8
30 +1 .0 - 0 .5
LABEL
6
23
35
7(G2) 6(E2)
1
Dimension:mm ollector-mitter oltage ate-mitter oltage ollector urrent ollector ower issipation unction emperature ange torage emperature ange (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal (kgfcm)
, .
ise urn-on all urn-off ime ime ime ime = 600V, = 0V = 20V,= 0V = 75A,= 15V = 5V,= 75mA = 10V,= 0V,= 1MH = = = = 300V 4.0 12.0 15V . . . . 3,200 . . . . . 1. . . . . . . .
ollector-mitter ut-ff urrent ate-mitter eakage urrent ollector-mitter aturation oltage ate-mitter hreshold oltage nput apacitance witching ime
orward urrent eak orward oltage everse ecovery ime

. . . . . . .

= 75A,= 0V = 75A,= -10V i/t= 150A/s

hermal mpedance iode th(j-c) Junction to Case Tc . . . . .
00
Fig.1- Output Characteristics (Typical)
150
Fig.2- Output Characteristics (Typical)
TC=25C
150
TC=125C VGE=20V 12V
VGE=20V
125
12V
125
15V 11V
15V 11V
Collector Current I C (A)
Collector Current I C (A)
100
100
75
10V
75
10V
50
9V
50
9V
25
25
8V
8V
0 0 0 1 2 3 4 5
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16 14 12 10 8 6 4 2 0
Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25C
16 14 12 10 8 6 4 2 0
TC=125C IC=30A 75A 150A
IC=30A 75A
150A
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
Collector to Emitter Voltage V CE (V)
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400 350
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
16 14 10000 30000
RL=4.0 TC=25C
Collector to Emitter Voltage V CE (V)
VGE=0V f=1MHZ TC=25C
Gate to Emitter Voltage VGE (V)
300 250 200 150 100 50 0
12 10
Capacitance C (pF)
Cies
3000
VCE=300V 200V 100V
8 6 4 2 0 300
Coes
1000
Cres
300
0
50
100
150
200
250
100 0.1
0.2
0.5
1
2
5
10
20
50
100
200
Total Gate Charge Qg (nC)
Collector to Emitter Voltage VCE (V)
00
Fig.7- Collector Current vs. Switching Time (Typical)
1 10
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
VCC=300V IC=75A VGE=15V TC=25C Resistive Load
0.8
Switching Time t (s)
Switching Time t (s)
tOFF
0.6
VCC=300V RG=12 VGE=15V TC=25C Resistive Load
5
2 1 0.5
tf
0.4
toff ton tr(V CE) tf
0.2 0.1 0.05
0.2
tON tr(V CE)
0
0
50
100
150
0.02
10
30
100
300
Collector Current IC (A)
Series Gate Impedance RG ( )
Fig.9- Collector Current vs. Switching Time
10 10
Fig.10- Series Gate Impedance vs. Switching Time
VCC=300V IC=75A VGE=15V TC=125C Inductive Load
1
Switching Time t (s)
Switching Time t (s)
tOFF tON tf tr(Ic)
VCC=300V RG=12 VGE=15V TC=125C Inductive Load
5
2 1 0.5
0.1
toff ton tf tr(IC )
0.2 0.1 0.05
0.01
0.001
0
25
50
75
100
125
150
0.02
10
30
100
300
Collector Current IC (A)
Series Gate Impedance RG ( )
Fig.11- Collector Current vs. Switching Loss
8 100
Fig.12- Series Gate Impedance vs. Switching Loss
VCC=300V IC=75A VGE=15V TC=125C Inductive Load
Switching Loss ESW (mJ/Pulse)
Switching Loss ESW (mJ/Pulse)
6
VCC=300V RG=12 VGE=15V TC=125C Inductive Load
EON
30
EOFF
10
4
EON ERR
EOFF
3
2
ERR
1
0
0
25
50
75
100
125
150
0.3
10
30
100
300
Collector Current IC (A)
Series Gate Impedance RG ( )
00
150
Fig.13- Forward Characteristics of Free Wheeling Diode (Typical)
TC=25C TC=125C
Fig.14- Reverse Recovery Characteristics (Typical)
1000
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
500
125
trr
200 100 50
IF=75A TC=25C TC=125C
Forward Current I F (A)
100
75
50
20 10 5
IRrM
25
0
0
1
2
3
4
2
0
75
150
225
300
375
450
Forward Voltage VF (V)
-di/dt (A/s)
Fig.15- Reverse Bias Safe Operating Area
500 200 100
RG=12 , VGE=15V, TC<125C
Collector Current I C (A)
50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800
Collector to Emitter Voltage V CE (V)
Fig.16- Transient Thermal Impedance
1x10 1
Transient Thermal Impedance Rth (J-C) (C/W)
3 1
FRD IGBT
3x10 -1 1x10 -1
3x10 -2 1x10 -2
TC=25C 1 Shot Pulse
3x10
-3
10 -5
10 -4
10 -3
10 -2
10 -1
1
10 1
Time t (s)
00


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